![]() Qoss, the trade-off characteristics between on-resistance and Qoss.The U-MOS IX-H Series also provides a low Ron ![]() It provides an improved Qoss performance, which is one of the main causes of power loss of synchronous rectification. Toshiba's U-MOS IX-H Series is specifically designed for synchronous rectification applications, including the secondary side of isolated switching power supplies. Additionally, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering set EMI. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. The new MOSFETs utilize Toshiba's latest generation low-voltage trench structure U-MOS IX-H process to lower the performance index for "RDS(ON) * Qsw figure of merit, improving switching applications to a level that surpasses other offerings. Delivering high-speed performance and industry-leading low on-resistance, the new MOSFETs are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies, and motor drives. (TAEC) has expanded its U-MOS IX-H Series of low-voltage N-channel power MOSFETs with the addition of new 40V and 45V products. Toshiba America Electronic Components, Inc. Expands Lineup of Low-Voltage U-MOS IX-H Series MOSFETs
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